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1

Oxygen precipitates and the formation of thermal donors in silicon

N. V. Vabishchevich, D. I. Brinkevich, V. S. Prosolovich

Journal:

Year:

1998

Language:

english

File:

PDF, 52 KB

english, 1998

2

Physical Parameters of the Broadband Noise-Generator Diodes

Buslyuk, V. V., Odzhayev, V. B., Panfilenko, A. K., Petlitsky, A. N., Prosolovich, V. S., Filipyenya, V. A., Yankovsky, Yu. N.

Journal:

Russian Microelectronics

Year:

2020

File:

PDF, 976 KB

2020

3

Mechanism of the Adhesive Interaction of Diazoquinone-Novolac Photoresist Films with Monocrystalline Silicon

Brinkevich, S. D., Grinyuk, E. V., Brinkevich, D. I., Sverdlov, R. L., Prosolovich, V. S., Pyatlitski, A. N.

Journal:

Journal of Applied Spectroscopy

Year:

2020

File:

PDF, 368 KB

2020

4

Dumping of electron heating effects in thermal oxides on Ge-doped silicon

V.V. Afanas'ev, A.Ph. Akulov, E.M. Gorid, V.V. Petrov, V.S. Prosolovich

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 222 KB

english, 1992

5

Formation of radiation defects in silicon at high-energy implantation

D.I. Brinkevich, V.B. Odzhaev, V.S. Prosolovich, Yu.N. Yankovski

Journal:

Year:

2005

Language:

english

File:

PDF, 194 KB

english, 2005

6

Donor centers in irradiated Si doped with rare-earth elements

V. V. Petrov, V. S. Prosolovich, V. D. Tkachev, Yu. A. Karpov, M. G. Millvidskii

Journal:

physica status solidi (a)

Year:

1985

Language:

english

File:

PDF, 220 KB

english, 1985

7

Thermal Defects in Silicon Doped with Rare-Earth Elements

V. V. Petrov, V. S. Prosolovich

Journal:

physica status solidi (a)

Year:

1989

Language:

english

File:

PDF, 432 KB

english, 1989

8

Quench-induced defects in silicon doped with group III acceptor impurities: Generation and annealing

D. I. Brinkevich, V. S. Prosolovich

Journal:

Inorganic Materials

Year:

2006

Language:

english

File:

PDF, 135 KB

english, 2006

9

Microhardness of silicon layers grown by liquid phase epitaxy

D. I. Brinkevich, S. A. Vabishchevich, V. S. Prosolovich

Journal:

Inorganic Materials

Year:

2007

Language:

english

File:

PDF, 223 KB

english, 2007

10

Strength degradation of silicon diffusion-doped with gold

D. I. Brinkevich, S. A. Vabishchevich, N. V. Vabishchevich, V. S. Prosolovich

Journal:

Inorganic Materials

Year:

2009

Language:

english

File:

PDF, 193 KB

english, 2009

11

Defect formation in silicon implanted with ∼1 MeV/nucleon ions

S. A. Vabishchevich, N. V. Vabishchevich, D. I. Brinkevich, V. S. Prosolovich, Yu. N. Yankovskii

Journal:

Inorganic Materials

Year:

2010

Language:

english

File:

PDF, 166 KB

english, 2010

12

Influence of background impurities on the formation of stacking faults in silicon wafers

D. I. Brinkevich, V. S. Prosolovich, S. A. Vabishchevich, A. N. Petlitskii

Journal:

Russian Microelectronics

Year:

2006

Language:

english

File:

PDF, 137 KB

english, 2006

13

Growth oxygen-containing defects in silicon grown in a weak vertical magnetic field

D. I. Brinkevich, V. B. Odzhaev, A. N. Petlitskii, V. S. Prosolovich

Journal:

Russian Microelectronics

Year:

2011

Language:

english

File:

PDF, 313 KB

english, 2011

14

Improving cutter performance by the application of nanostructural coatings

Yu. G. Kabaldin, S. V. Seryi, S. N. Murav’ev, A. A. Prosolovich, E. V. Simagina

Journal:

Russian Engineering Research

Year:

2010

Language:

english

File:

PDF, 283 KB

english, 2010

15

Improving the stability of cutting on the basis of fractal, dimensional, and wavelet analysis

Yu. G. Kabaldin, S. V. Seryi, A. V. Prosolovich, E. N. Burdasov

Journal:

Russian Engineering Research

Year:

2010

Language:

english

File:

PDF, 688 KB

english, 2010

16

Nanostructuring and self-organization in cutting

Yu. G. Kabaldin, A. A. Prosolovich, E. G. Kolykhalova, A. A. Utkin

Journal:

Russian Engineering Research

Year:

2011

Language:

english

File:

PDF, 2.95 MB

english, 2011

17

Doping Silicon with Lanthanides as a Method for the Optimization of Parameters of Ionizing-Radiation Detectors

N. P. Afanas'eva, D. I. Brinkevich, V. S. Prosolovich, Yu. N. Yankovskii

Journal:

Instruments and Experimental Techniques

Year:

2002

Language:

english

File:

PDF, 29 KB

english, 2002

18

Effect of Rare-Earth Impurities on the Magnetoresistance of Single-Crystal Silicon

D. I. Brinkevich, M. G. Lukashevich, V. S. Prosolovich, D. A. Skripka, Yu. N. Yankovskii

Journal:

Inorganic Materials

Year:

2002

Language:

english

File:

PDF, 33 KB

english, 2002

19

Carrier Trapping and Scattering in Ge-Doped SiO2

D. I. Brinkevich, V. S. Prosolovich, Yu. N. Yankovskii

Journal:

Russian Microelectronics

Year:

2002

Language:

english

File:

PDF, 28 KB

english, 2002

20

Micromechanical properties of GaP〈Dy〉 epilayers

D. I. Brinkevich, N. V. Vabishchevich, V. S. Prosolovich

Journal:

Inorganic Materials

Year:

2012

Language:

english

File:

PDF, 309 KB

english, 2012

21

Boron electrical activation in dual B++ N++ and B++ Ar+ion-implanted silicon

V. B. Odzhaev,V. N. Popok,V. S. Prosolovich,V. Hnatowicz

Journal:

Applied Physics A: Materials Science & Processing

Year:

1996

Language:

english

File:

PDF, 352 KB

english, 1996

22

Calcium-activated potassium channels mediated blood-brain tumor barrier opening in a rat metastatic brain tumor model

Jinwei Hu, Xiangpeng Yuan, MinHee K Ko, Dali Yin, Manuel R Sacapano, Xiao Wang, Bindu M Konda, Andres Espinoza, Ksenia Prosolovich, John M Ong, Dwain Irvin, Keith L Black

Journal:

Molecular Cancer

Year:

2007

Language:

english

File:

PDF, 2.81 MB

english, 2007

23

Societies Communications

Brinkevich, D. I., Vabishchevich, N. V., Vabishchevich, S. A., Petlitski, A. N., Prosolovich, V. S., Yankovskii, Yu. N.

Journal:

Clinical Neuroradiology

Year:

2014

Language:

german

File:

PDF, 269 KB

german, 2014

24

Physical and mechanical properties of silicon near the SiO2/Si interface

Brinkevich, D. I., Vabishchevich, N. V., Vabishchevich, S. A., Petlitski, A. N., Prosolovich, V. S., Yankovskii, Yu. N.

Journal:

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

Year:

2013

Language:

english

File:

PDF, 170 KB

english, 2013

25

Features of defect formation under the thermal treatment of dislocation-free single-crystal large-diameter silicon wafers with the specified distribution of oxygen-containing gettering centers in the bulk

Vasilév, Yu. B., Verezub, N. A., Mezhennyi, M. V., Prosolovich, V. S., Prostomolotov, A. I., Reznik, V. Ya.

Journal:

Russian Microelectronics

Year:

2013

Language:

english

File:

PDF, 1.80 MB

english, 2013

26

Ion implantation of positive photoresists

Brinkevich, D. I., Brinkevich, S. D., Vabishchevich, N. V., Odzhaev, V. B., Prosolovich, V. S.

Journal:

Russian Microelectronics

Year:

2014

Language:

english

File:

PDF, 688 KB

english, 2014

27

[IEEE 2004 14th International Crimean Conference "Microwave and Telecommunication Technology" - Sevastopoll, Crimea, Ukraine (2004.9.13-2004.9.17)] 2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843) - MOS-transistors on the Si:Ho in the technology of SHF-devices

Samokhval, V.V., Brinkevich, D.I., Prosolovich, V.S., Yankovski, Yu.N.

Year:

2004

File:

PDF, 168 KB

2004

28

[IEEE 2003 13th International Crimean Conference 'Microwave and Telecommunication Technology' Conference Proceedings - Sevastopol, Crimea, Ukraine (2003.9.8-2003.9.12)] 13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003. - Germanium-doped epitaxial silicon layers for SHF ICs

Brinkevich, D.I., Prosolovich, V.S., Yankovski, O.N., Yankovski, Yu.N.

Year:

2003

File:

PDF, 319 KB

2003

29

[Weber Publishing 12th International Crimean Conference on Microwave and Telecommunication Technology (CriMICo'2002) - Sevastopol, Crimea, Ukraine (9-13 Sept. 2002)] 12th International Conference Microwave and Telecommunication Technology - Lanthanides application in planar technology of microwave devices production

Brinkevich, D.I., Prosolovich, V.S., Yankovski, Yu.N.

Year:

2002

Language:

english

File:

PDF, 216 KB

english, 2002

30

Does 1-(R)-aminoindan Possess Neuroprotective Properties Against Experimental Parkinson's Disease?

Weinreb, Orly, Bar-Am, Orit, Prosolovich, Ksenia, Amit, Tamar, Youdim, Moussa B.H.

Journal:

Antioxidants & Redox Signaling

Year:

2011

Language:

english

File:

PDF, 429 KB

english, 2011

31

[IEEE 2000 10th International Crimean Microwave Conference. Microwave and Telecommunication Technology. Conference Proceedings - Crimea, Ukraine (2000.9.11-2000.9.15)] 2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415) - Optimization of SHF-diode parameters by ionizing radiation

Prosolovich, V.S., Yankovski, Yu.N., Brinkevich, D.I.

Year:

2000

File:

PDF, 291 KB

2000

32

Surgical Reimplantation for the Correction of Vesicoureteral Reflux following Failed Endoscopic Injection

Chertin, Boris, Prosolovich, Ksenia, Aharon, Sagiv, Nativ, Ofer, Halachmi, Sarel

Journal:

Advances in Urology

Year:

2011

Language:

english

File:

PDF, 73 KB

english, 2011

33

Modification of the positive photoresist surface by ion implantation

Brinkevich, D. I., Brinkevich, S. D., Lukashevich, M. G., Prosolovich, V. S., Odzhaev, V. B., Yankovskii, Yu. N.

Journal:

Russian Microelectronics

Year:

2015

Language:

english

File:

PDF, 503 KB

english, 2015

34

[IEEE 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010) - Sevastopol (2010.9.13-2010.9.17)] 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" - Features of formation of active areas of n-p-n-transistors for submicronic integrated microcircuits

Belous, V A, Brinkevich, D I, Prosolovich, V S, Chernyi, V V, Yankovski, Yu N

Year:

2010

Language:

english

File:

PDF, 2.08 MB

english, 2010

35

Double Implantation in GaAs

Kozlov, I.P., Odjaev, V.B., Prosolovich, V.S., Yankovsky, Yu.N.

Journal:

MRS Proceedings

Year:

1990

Language:

english

File:

PDF, 194 KB

english, 1990

36

Reflection Spectra Modification of Diazoquinone-Novolak Photoresist Implanted with B and P Ions

Brinkevich, D. I., Kharchenko, A. A., Prosolovich, V. S., Odzhaev, V. B., Brinkevich, S. D., Yankovskii, Yu. N.

Journal:

Russian Microelectronics

Year:

2019

Language:

english

File:

PDF, 453 KB

english, 2019

37

Adhesion of DiazoquinoneâNovolac Photoresist Films Implanted with Boron and Phosphorus Ions to Single-Crystal Silicon

Vabishchevich, S. A., Brinkevich, S. D., Brinkevich, D. I., Prosolovich, V. S.

Journal:

High Energy Chemistry

Year:

2020

Language:

english

File:

PDF, 397 KB

english, 2020

38

Electronic Conductivity in a Ð +-Ion Implanted Positive Photoresist

Oleshkevich, A. N., Lapchuk, N. M., Odzhaev, V. B., Karpovich, I. A., Prosolovich, V. S., Brinkevich, D. I., Brinkevich, S. D.

Journal:

Russian Microelectronics

Year:

2020

Language:

english

File:

PDF, 592 KB

english, 2020

39

EPR Spectroscopy of DiazoquinoneâNovolac Resist Films Implanted with P+ and B+ Ions

Brinkevich, D. I., Brinkevich, S. D., Oleshkevich, A. N., Prosolovich, V. S., Odzhaev, V. B.

Journal:

High Energy Chemistry

Year:

2020

Language:

english

File:

PDF, 663 KB

english, 2020

40

Radiation-Stimulated Transformation of the Reflectance Spectra of DiazoquinoneâNovolac Photoresist Films Implanted with Antimony Ions

Kharchenko, A. A., Brinkevich, D. I., Prosolovich, V. S., Brinkevich, S. D., Odzaev, V. B., Yankovski, Yu. N.

Journal:

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

Year:

2020

File:

PDF, 466 KB

2020

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